Epitaxy Development Engineer/Specialist for GaN LEDs

Posted 17 days ago

Foreign HR

Fujian, China

Job Profile:

Great job opportunities for LEDs professionals.

Job Details:

Responsibilities
-Epitaxial development of novel processes and structures for GaN material system in MOCVD (Metal-organic Chemical Vapor Deposition) processes
-Planning and evaluation of experiments and measurements
-In-depth analysis of processes for crucial parameters on material components and properties
-Sustainable and systematic development in improving efficiency , stability and electrical characteristics of epitaxial wafers

Who we are looking for
-University degree in chemistry, physics, materials science or a comparable natural science degree
-Several years of experience in research and development of novel structures and new process regimes of III-V semiconductors, preferably doctorate in the field of epitaxy and deep understanding of MOCVD processes
-Theoretical knowledge of optoelectronic semiconductor
-Analytical strengths & ability to solve technical problems and issues
-Extraordinary ability for innovation of semiconductor device


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Job Summary

Company Foreign HR
Location Fujian, China
Job Type Contract (1 year)
Pay Rate Competitive Salary
Years of Experience Experienced(5-10 Years)
Job Reference Code J2200055

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